GL41YHE3_A/H
Vishay General Semiconductor - Diodes Division
English
Part Number: | GL41YHE3_A/H |
---|---|
Manufacturer/Brand: | Vishay General Semiconductor – Diodes Division |
Part of Description: | DIODE GEN PURP 1.6KV 1A DO213AB |
Datasheets: | None |
RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
Share: |
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
9000+ | $0.129 |
10500+ | $0.1206 |
37500+ | $0.12 |
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Product Attribute | Attribute Value |
---|---|
Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 1 A |
Voltage - DC Reverse (Vr) (Max) | 1600 V |
Technology | Standard |
Supplier Device Package | DO-213AB |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Series | SUPERECTIFIER® |
Package / Case | DO-213AB, MELF (Glass) |
Product Attribute | Attribute Value |
---|---|
Package | Tape & Reel (TR) |
Operating Temperature - Junction | -65°C ~ 175°C |
Mounting Type | Surface Mount |
Current - Reverse Leakage @ Vr | 10 µA @ 1600 V |
Current - Average Rectified (Io) | 1A |
Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
DOT COVERED PALM, X-LARGE
DIODE GEN PURP 1.6KV 1A DO213AB
DIODE GEN PURP 1.6KV 1A DO213AB
DOT COVERED PALM, 2X-LARGE
DIODE GEN PURP 1.6KV 1A DO213AB
DIODE GEN PURP 1.6KV 1A DO213AB
DIODE GEN PURP 1.6KV 1A DO213AB
DIODE GEN PURP 1.6KV 1A DO213AB
DOT COVERED PALM, MEDIUM
DOT COVERED PALM, X-SMALL
DIODE GEN PURP 1.6KV 1A DO213AB
SHARP DIP-2
DIODE GEN PURP 1.6KV 1A DO213AB
DOT COVERED PALM, LARGE
DOT COVERED PALM, SMALL
DIODE GEN PURP 1.6KV 1A DO213AB
CRYSTAL METAL CAN 49S/SMD T&R 1K
DIODE GEN PURP 1.6KV 1A DO213AB
DIODE GEN PURP 1.6KV 1A DO213AB
June 6th, 2024
April 18th, 2024
April 13th, 2024
December 20th, 2023
![]() GL41YHE3_A/HVishay General Semiconductor - Diodes Division |
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